화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 Effect of boron on gate oxide degradation and reliability in PMOS devices
Brozek T, Kyono C, Ilderem V
Solid-State Electronics, 45(8), 1293, 2001
2 Investigation of plasma damage effects on characteristics and reliability of MOS devices with thin gate dielectrics
Brozek T, Huber J, Walls J
Solid-State Electronics, 45(8), 1299, 2001
3 Evaluation of Plasma Damage Using Fully Processed Metal-Oxide-Semiconductor Transistors
Li XY, Brozek T, Preuninger F, Chan D, Viswanathan CR
Journal of Vacuum Science & Technology B, 14(1), 571, 1996
4 Comparison of Damage Created by a Chemical Downstream Etcher and Plasma-Immersion System in Metal-Oxide-Semiconductor Capacitors
Brozek T, Dao T, Viswanathan CR
Journal of Vacuum Science & Technology B, 14(1), 577, 1996