검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
A PEALD Tunnel Dielectric for Three-Dimensional Non-Volatile Charge-Trapping Technology Cacciato A, Breuil L, Dekker H, Zahid M, Kar GS, Everaert JL, Schoofs G, Shi X, Van den Bosch G, Jurczak M, Debusschere I, Van Houdt J, Cockburn A, Date L, Xa LQ, Le M, Lee W Electrochemical and Solid State Letters, 14(7), H271, 2011 |
| 2 |
Lanthanide Aluminates as Dielectrics for Non-Volatile Memory Applications: Material Aspects Adelmann C, Swerts J, Richard O, Conard T, Popovici M, Meersschaut J, Afanas'ev VV, Breuil L, Cacciato A, Opsomer K, Brijs B, Tielens H, Pourtois G, Bender H, Jurczak M, Van Houdt J, Van Elshocht S, Kittl JA Journal of the Electrochemical Society, 158(8), H778, 2011 |
| 3 |
Rare-earth aluminates as a charge trapping materials for NAND flash memories: Integration and electrical evaluation Suhane A, Cacciato A, Richard O, Arreghini A, Adelmann C, Swerts J, Rothschild O, Van den Bosch G, Breuil L, Bender H, Jurczak M, Debusschere I, Kittl JA, De Meyer K, Van Houdt J Solid-State Electronics, 65-66, 177, 2011 |
| 4 |
Physical understanding and modeling of SANOS retention in programmed state Furnemont A, Cacciato A, Breuil L, Rosmeulen M, Maes H, De Meyer K, Van Houdt J Solid-State Electronics, 52(4), 577, 2008 |
| 5 |
Scaling effects in dual-bit split-gate nitride memory devices Breuil L, Haspeslagh L, Lorenzini M, De Vos J, Van Houdt J Solid-State Electronics, 49(11), 1862, 2005 |
| 6 |
Characterization of the spatial charge distribution in local charge-trapping memory devices using the charge-pumping technique Rosmeulen M, Breuil L, Lorenzini M, Haspeslag L, Van Houdt J, De Meyer K Solid-State Electronics, 48(9), 1525, 2004 |