화학공학소재연구정보센터
검색결과 : 10건
No. Article
1 Chemical equilibrium analysis of silicon carbide oxidation in oxygen and air
Chen SY, Boyd ID
Journal of the American Ceramic Society, 102(7), 4272, 2019
2 On the mechanism of energy transfer in the plasma-propellant interaction
Porwitzky AJ, Keidar M, Boyd ID
Propellants Explosives Pyrotechnics, 32(5), 385, 2007
3 Free molecular background flow in a vacuum chamber equipped with two-sided pumps
Cai CP, Boyd ID, Sun QH
Journal of Vacuum Science & Technology A, 24(1), 9, 2006
4 Monte Carlo simulation of vapor transport in physical vapor deposition of titanium
Balakrishnan J, Boyd ID, Braun DG
Journal of Vacuum Science & Technology A, 18(3), 907, 2000
5 Monte Carlo modeling of electron beam physical vapor deposition of yttrium
Fan J, Boyd ID, Shelton C
Journal of Vacuum Science & Technology A, 18(6), 2937, 2000
6 Modeling of silicon deposition process scale-up employing axisymmetric ring nozzle sources. I
Chen G, Boyd ID
Journal of Vacuum Science & Technology A, 17(3), 970, 1999
7 Three dimensional modeling of silicon deposition process scale-up employing supersonic jets. II
Chen G, Boyd ID, Engstrom JR
Journal of Vacuum Science & Technology A, 17(3), 978, 1999
8 Monte Carlo analysis of a hyperthermal silicon deposition process
Chen G, Boyd ID, Roadman SE, Engstrom JR
Journal of Vacuum Science & Technology A, 16(2), 689, 1998
9 Effects of wall recombination on the etch rate and plasma composition of an etch reactor
Font GI, Boyd ID, Balakrishnan J
Journal of Vacuum Science & Technology A, 16(4), 2057, 1998
10 Numerical Study of the Effects of Reactor Geometry on a Chlorine Plasma Helicon Etch Reactor
Font GI, Boyd ID
Journal of Vacuum Science & Technology A, 15(2), 313, 1997