검색결과 : 10건
No. | Article |
---|---|
1 |
Chemical equilibrium analysis of silicon carbide oxidation in oxygen and air Chen SY, Boyd ID Journal of the American Ceramic Society, 102(7), 4272, 2019 |
2 |
On the mechanism of energy transfer in the plasma-propellant interaction Porwitzky AJ, Keidar M, Boyd ID Propellants Explosives Pyrotechnics, 32(5), 385, 2007 |
3 |
Free molecular background flow in a vacuum chamber equipped with two-sided pumps Cai CP, Boyd ID, Sun QH Journal of Vacuum Science & Technology A, 24(1), 9, 2006 |
4 |
Monte Carlo simulation of vapor transport in physical vapor deposition of titanium Balakrishnan J, Boyd ID, Braun DG Journal of Vacuum Science & Technology A, 18(3), 907, 2000 |
5 |
Monte Carlo modeling of electron beam physical vapor deposition of yttrium Fan J, Boyd ID, Shelton C Journal of Vacuum Science & Technology A, 18(6), 2937, 2000 |
6 |
Modeling of silicon deposition process scale-up employing axisymmetric ring nozzle sources. I Chen G, Boyd ID Journal of Vacuum Science & Technology A, 17(3), 970, 1999 |
7 |
Three dimensional modeling of silicon deposition process scale-up employing supersonic jets. II Chen G, Boyd ID, Engstrom JR Journal of Vacuum Science & Technology A, 17(3), 978, 1999 |
8 |
Monte Carlo analysis of a hyperthermal silicon deposition process Chen G, Boyd ID, Roadman SE, Engstrom JR Journal of Vacuum Science & Technology A, 16(2), 689, 1998 |
9 |
Effects of wall recombination on the etch rate and plasma composition of an etch reactor Font GI, Boyd ID, Balakrishnan J Journal of Vacuum Science & Technology A, 16(4), 2057, 1998 |
10 |
Numerical Study of the Effects of Reactor Geometry on a Chlorine Plasma Helicon Etch Reactor Font GI, Boyd ID Journal of Vacuum Science & Technology A, 15(2), 313, 1997 |