검색결과 : 20건
| No. | Article |
|---|---|
| 1 |
Strained InGaAs/InAlAs quantum wells for complementary III-V transistors Bennett BR, Chick TF, Boos JB, Champlain JG, Podpirka AA Journal of Crystal Growth, 388, 92, 2014 |
| 2 |
Enhanced hole mobility and density in GaSb quantum wells Bennett BR, Chick TF, Ancona MG, Boos JB Solid-State Electronics, 79, 274, 2013 |
| 3 |
High-frequency, 6.2 angstrom pN heterojunction diodes Champlain JG, Magno R, Park D, Newman HS, Boos JB Solid-State Electronics, 67(1), 105, 2012 |
| 4 |
Study of Shubnikov-de Haas oscillations and measurement of hole effective mass in compressively strained InXGa1-XSb quantum wells Nainani A, Irisawa T, Bennett BR, Boos JB, Ancona MG, Saraswat KC Solid-State Electronics, 62(1), 138, 2011 |
| 5 |
Scaling projections for Sb-based p-channel FETs Ancona MG, Bennett BR, Boos JB Solid-State Electronics, 54(11), 1349, 2010 |
| 6 |
Demonstration of high-mobility electron and hole transport in a single InGaSb well for complementary circuits Bennett BR, Ancona MG, Champlain JG, Papanicolaou NA, Boos JB Journal of Crystal Growth, 312(1), 37, 2009 |
| 7 |
Strained GaSb/AlAsSb quantum wells for p-channel field-effect transistors Bennett BR, Ancona MG, Boos JB, Canedy CB, Khan SA Journal of Crystal Growth, 311(1), 47, 2008 |
| 8 |
InAs-based heterostructure barrier varactor diodes with In0.3Al0.7As0.4Sb0.6 as the barrier material Champlain JG, Magno R, Ancona M, Newman HS, Boos JB Solid-State Electronics, 52(11), 1829, 2008 |
| 9 |
Narrow band gap InGaSb, InAlAsSb alloys for electronic devices Magno R, Glaser ER, Tinkham BP, Champlain JG, Boos JB, Ancona MG, Campbell PM Journal of Vacuum Science & Technology B, 24(3), 1622, 2006 |
| 10 |
Low resistance, unannealed, Ohmic contacts to p-type In0.27Ga0.73Sb Champlain JG, Magno R, Boos JB Journal of Vacuum Science & Technology B, 24(5), 2388, 2006 |