| 1 |
Interface properties and bias temperature instability with ternary H-Cl-N mixed plasma post-oxidation annealing in 4H-SiC MOS capacitors
Yang C, Zhang FL, Yin ZP, Su Y, Qin FW, Wang DJ
Applied Surface Science, 488, 293, 2019 |
| 2 |
Interface state degradation during AC positive bias temperature instability stress
Kang SC, Kim SM, Jung U, Kim Y, Park W, Lee BH
Solid-State Electronics, 158, 46, 2019 |
| 3 |
Reliability characterization of SiON and MGHK MOSFETs using flicker noise and its correlation with the bias temperature instability
Samnakay R, Balandin AA, Srinivasan P
Solid-State Electronics, 135, 37, 2017 |
| 4 |
Influence of bias and temperature conditions on NBTI physical mechanisms in p-channel power U-MOSFETs
Tallarico AN, Magnone P, Barletta G, Magri A, Sangiorgi E, Fiegna C
Solid-State Electronics, 108, 42, 2015 |
| 5 |
High speed Bias Temperature Instability measurements on 20 nm RMG HKMG MOSFETs
Chandra N, Chandrashekhar S, Francis R, Kerber A, Srinivasan P, Nigam T
Solid-State Electronics, 101, 18, 2014 |
| 6 |
The influence of hafnium doping on bias stability in zinc oxide thin film transistors
Kim WS, Moon YK, Kim KT, Shin SY, Ahn BD, Lee JH, Park JW
Thin Solid Films, 519(15), 5161, 2011 |
| 7 |
Improvement in the negative bias temperature stability of ZnO based thin film transistors by Hf and Sn doping
Kim WS, Moon YK, Kim KT, Shin SY, Du Ahn B, Lee JH, Park JW
Thin Solid Films, 519(20), 6849, 2011 |
| 8 |
Improvement in the bias stability of zinc oxide thin-film transistors using Si3N4 insulator with SiO2 interlayer
Kim WS, Moon YK, Kim KT, Shin SY, Park JW
Thin Solid Films, 520(1), 578, 2011 |
| 9 |
Some issues of hot-carrier degradation and negative bias temperature instability of advanced SOICMOS transistors
Ioannou DP, Ioannou DE
Solid-State Electronics, 51(2), 268, 2007 |
| 10 |
Physics of SiC processing
Pensl G, Afanas'ev VV, Bassler M, Frank T, Laube M, Weidner M
Materials Science Forum, 338-3, 831, 2000 |
