Physics of SiC processing

Pensl G; Afanas'ev VV; Bassler M; Frank T; Laube M; Weidner M

Materials Science Forum, Vol.338-3, 831-836, 2000

Pensl G, Afanas'ev VV, Bassler M, Frank T, Laube M, Weidner M

Three topics are briefly discussed: 1) The generation of intrinsic-related defect centers by ion implantation. 2) The diffusion mechanism of boron in SiC. 3) The degradation of 6H-SiC MOS capacitors which are operated at temperatures above 600K.

Keywords:boron diffusion;degradation of SiC MOS capacitors;doping by ion implantation;implantation-induced defect centers;negative-bias-temperature instability