1 |
Surface modification of textured silicon and its wetting behaviour Kumar V, Bhat KN, Sharma NN Journal of Adhesion Science and Technology, 29(4), 308, 2015 |
2 |
Design of single-gate n-channel and p-channel MOSFETs with enhanced current-drive due to simultaneous switching of front and back channels in SOICMOS technology Bindu B, Lakshmi N, Bhat KN, DasGupta A Solid-State Electronics, 50(7-8), 1359, 2006 |
3 |
Electrical characterization of ultrathin oxides of silicon grown by wet oxidation at 800 degrees C Bhat VK, Bhat KN, Subrahmanyam A Solid-State Electronics, 45(7), 1127, 2001 |
4 |
Effects of deposition and annealing conditions on the structure and electrical properties of LPCVD silicon thin films Das S, Shriram R, Bhat KN, Rao PRS Journal of Materials Science, 35(18), 4743, 2000 |
5 |
The growth of ultrathin oxides of silicon by low temperature wet oxidation technique Bhat VK, Pattabiraman M, Bhat KN, Subrahmanyam A Materials Research Bulletin, 34(10-11), 1797, 1999 |
6 |
Effects of octa decyl thiol (ODT) treatment on the gallium arsenide surface and interface state density Remashan K, Bhat KN Thin Solid Films, 342(1-2), 20, 1999 |
7 |
Electrical and photovoltaic characteristics of poly-emitter solar cells Tilak AVN, Bhat KN Thin Solid Films, 312(1-2), 273, 1998 |