Deposition temperature and annealing conditions have pronounced effects on the structure and electrical properties of LPCVD silicon thin films. Films grown at 580 degrees C are amorphous whereas those grown at 620 degrees C are microcrystalline. All thin films are subjected to phosphorous diffusion followed by different annealing treatments. Annealing of amorphous films at 1000 degrees C results in large grains with no favoured orientation and with a relatively high mobility value. Annealing treatment at 1000 degrees C of the microcrystalline sample results in moderate grain growth with a relatively low mobility which presumably is due to some favoured grain orientation.