검색결과 : 7건
| No. | Article |
|---|---|
| 1 |
Selected papers from ESSDERC 2014 Bez R, Meneghesso G, Pavan P, Zanoni E Solid-State Electronics, 113, 1, 2015 |
| 2 |
Emerging memories Baldi L, Bez R, Sandhu G Solid-State Electronics, 102, 2, 2014 |
| 3 |
Impact of Ge-Sb-Te compound engineering on the set operation performance in phase-change memories Boniardi M, Ielmini D, Tortorelli I, Redaelli A, Pirovano A, Allegra M, Magistretti M, Bresolin C, Erbetta D, Modelli A, Varesi E, Pellizzer F, Lacaita AL, Bez R Solid-State Electronics, 58(1), 11, 2011 |
| 4 |
Resistive switching characteristics of NiO films deposited on top of W or Cu pillar bottom electrodes Dumas C, Deleruyelle D, Demolliens A, Muller C, Spiga S, Cianci E, Fanciulli M, Tortorelli I, Bez R Thin Solid Films, 519(11), 3798, 2011 |
| 5 |
Explanation of programming distributions in phase-change memory arrays based on crystallization time statistics Mantegazza D, Ielmini D, Pirovano A, Lacaita AL, Varesi E, Pellizzer F, Bez R Solid-State Electronics, 52(4), 584, 2008 |
| 6 |
Phase-change memory technology with self-aligned mu Trench cell architecture for 90 nm node and beyond Pirovano A, Pellizzer F, Tortorelli I, Rigano A, Harrigan R, Magistretti M, Petruzza P, Varesi E, Redaelli A, Erbetta D, Marangon T, Bedeschi F, Fackenthal R, Atwood G, Bez R Solid-State Electronics, 52(9), 1467, 2008 |
| 7 |
A new high injection efficiency non-volatile memory cell: BipFlash Esseni D, Selmi L, Bez R, Modelli A Solid-State Electronics, 46(11), 1739, 2002 |