화학공학소재연구정보센터
검색결과 : 11건
No. Article
1 Defects in Ge caused by sub-amorphizing self-implantation: Formation and dissolution
Bisognin G, Vangelista S, Mastromatteo M, Napolitani E, De Salvador D, Carnera A, Berti M, Bruno E, Scapellato G, Terrasi A
Thin Solid Films, 518(9), 2326, 2010
2 Matrix effects in SIMS depth profiles of SiGe relaxed buffer layers
Sanchez-Almazan F, Napolitani E, Carnera A, Drigo AV, Isella G, von Kanel H, Berti M
Applied Surface Science, 231-2, 704, 2004
3 Structural characterization of InGaAs/InP heterostructures grown under compressive and tensile stress
Salviati G, Ferrari C, Lazzarini L, Nasi L, Drigo AV, Berti M, De Salvador D, Natali M, Mazzer M
Applied Surface Science, 188(1-2), 36, 2002
4 Structural characterisation and stability of Si1-xGex/Si(100) heterostructures grown by molecular beam epitaxy
Re M, Scalese S, Mirabella S, Terrasi A, Priolo F, Rimini E, Berti M, Coati A, Drigo A, Carnera A, De Salvador D, Spinella C, La Mantia A
Journal of Crystal Growth, 227, 749, 2001
5 Charge storage and screening of the internal field in GaN/AlGaN quantum wells
Traetta G, Di Carlo A, Reale A, Lugli P, Lomascolo M, Passaseo A, Cingolani R, Bonfiglio A, Berti M, Napolitani E, Natali M, Sinha SK, Drigo AV
Journal of Crystal Growth, 230(3-4), 492, 2001
6 Low pressure MOVPE growth and structural properties of ZnMgSe epilayers on (100)GaAs
Prete P, Lovergine N, Tapfer L, Berti M, Sinha SK, Mancini AM
Journal of Crystal Growth, 221, 410, 2000
7 Crack formation in tensile InGaAs/InP layers
Natali M, De Salvador D, Berti M, Drigo AV, Lazzarini L, Salviati G, Rossetto G, Torzo G
Journal of Vacuum Science & Technology B, 18(5), 2527, 2000
8 Photocurrent spectroscopy of GaN and AlGaN epilayers grown on 6H (0001) silicon carbide
DeVittorio M, Coli G, Rinaldi R, Gigli G, Cingolani R, De Salvador D, Berti M, Drigo A, Fucilli F, Ligonzo T, Augelli V, Rizzi A, Lantier R, Freundt D, Luth H, Neubauer B, Gerthsen D
Solid-State Electronics, 44(3), 465, 2000
9 Investigation of growth mode behavior and surface morphology evolution of metalorganic vapor phase epitaxy grown ZnTe layers on (001) GaAs
Longo M, Lovergine N, Mancini AM, Leo G, Berti M
Journal of Vacuum Science & Technology B, 16(5), 2650, 1998
10 Experimental-Evidence of 2-Dimensional-3-Dimensional Transition in the Stranski-Krastanow Coherent Growth
Berti M, Drigo AV, Rossetto G, Torzo G
Journal of Vacuum Science & Technology B, 15(5), 1794, 1997