Low pressure MOVPE growth and structural properties of ZnMgSe epilayers on (100)GaAs

Prete P; Lovergine N; Tapfer L; Berti M; Sinha SK; Mancini AM

Journal of Crystal Growth, Vol.221, 410-415, 2000

DOI10.1016/S0022-0248(00)00723-5 Export Citation

Low pressure MOVPE growth and structural properties of ZnMgSe epilayers on (100)GaAs

Prete P, Lovergine N, Tapfer L, Berti M, Sinha SK, Mancini AM

The low-pressure MOVPE growth of ZnMgSe on (1 0 0)GaAs is reported. ZnMgSe alloys were deposited after a thin pseudomorphic ZnSe buffer layer by using dimethylzinc: triethylammine (Me2Zn:Et3N), ditertiarylbutilselenide (Bu-t(2) Se) and bis(methylcyclopentadienyl)magnesium [(MeCp)(2)Mg]. Zn1-xMgxSe (0.10

Keywords:MOVPE;ZnMgSe;Rutherford backscattering;X-ray diffraction