| 1 |
Fundamental limits of MWIR HgCdTe barrier detectors operating under non-equilibrium mode
Kopytko M, Jozwikowski K, Rogalski A
Solid-State Electronics, 100, 20, 2014 |
| 2 |
Microstructure, electrical, and optical properties of evaporated PtSi/p-Si(100) Schottky barriers as high quantum efficient infrared detectors
Wu HH, Chang RS, Horng GH
Thin Solid Films, 466(1-2), 314, 2004 |
| 3 |
Interfacial composition and electrical properties of PtSi/Si1-xGex/Si diodes by molecular beam epitaxy (MBE) and pulsed laser deposition (PLD)
Li MC, Zhao LC, Chen XK
Applied Surface Science, 219(3-4), 249, 2003 |
| 4 |
Film thickness dependence on the electrical and optical properties of PtSi/p-Si(100) Schottky barrier detector
Lyu YT, Lee CT, Horng GJ, Ho C, Lee CY, Wu CS
Materials Chemistry and Physics, 74(2), 177, 2002 |
| 5 |
Microstructure effects on quantum efficiency in PtSi/p-Si(100) Schottky barrier detector
Horng GJ, Chang CY, Chang T, Ho C, Wu CS
Materials Chemistry and Physics, 68(1-3), 17, 2001 |
| 6 |
Random line selected charge accumulation readout structure for random access infrared imager application
Horng GJ, Chang CY, Yen YC, Wang WL
Solid-State Electronics, 44(11), 2027, 2000 |
