화학공학소재연구정보센터
검색결과 : 9건
No. Article
1 High-temperature stable multi-defect clusters in neutron irradiated silicon carbide: Electron paramagnetic resonance study
Ilyin IV, Muzafarova MV, Mokhov EN, Konnikov SG, Baranov PG
Materials Science Forum, 483, 489, 2005
2 Probing of the wave function of shallow donors and acceptors by EPR in SiC crystals with changed isotopic composition
Muzafarova MV, Ilyin IV, Mokhov EN, Baranov PG, Ber BY, Ionov A, Kop'ev PS, Kaliteevskii MA, Godisov ON, Kaliteevskii AK
Materials Science Forum, 483, 507, 2005
3 The neutral silicon vacancy in SiC: Ligand hyperfine interaction
Wagner M, Thinh NQ, Son NT, Baranov PG, Mokhov EN, Hallin C, Chen WM, Janzen E
Materials Science Forum, 389-3, 501, 2002
4 Phosphorus-related shallow and deep defects in 6H-SiC
Baranov PG, Ilyin IV, Mokhov EN, von Bardeleben HJ, Cantin JL
Materials Science Forum, 433-4, 503, 2002
5 EPR of deep Al and deep B in heavily Al-doped as grown 4H-SiC
Ilyin IV, Mokhov EN, Baranov PG
Materials Science Forum, 353-356, 521, 2001
6 The electronic structure of the N donor center in 4H-SiC and 6H-SiC
van Duijn-Arnold A, Zondervan R, Baranov PG, Mokhov EN, Schmidt J
Materials Science Forum, 353-356, 525, 2001
7 Identification of iron and nickel in 6H-SiC by electron paramagnetic resonance
Baranov PG, Ilyin IV, Mokhov EN, Khramtsov VA
Materials Science Forum, 353-356, 529, 2001
8 The spatial distribution of the electronic wave function of the shallow boron acceptor in 4H-and 6H-SiC
van Duijn-Arnold A, Mol J, Verberk R, Schmidt J, Mokhov EN, Baranov PG
Materials Science Forum, 338-3, 799, 2000
9 The electronic structure of the Be acceptor centers in 6H-SiC
van Duijn-Arnold A, Schmidt J, Poluektov OG, Baranov PG, Mokhov EN
Materials Science Forum, 338-3, 805, 2000