화학공학소재연구정보센터
Materials Science Forum, Vol.433-4, 503-506, 2002
Phosphorus-related shallow and deep defects in 6H-SiC
The phosphorus related defects in neutron transmutation doped 6H-SiC have been studied by electron paramagnetic resonance (EPR) spectroscopy. Two set of three phosphorous related EPR spectra are observed: the first one previously labeled P1, P2, P-V is attributed to the groundstate of the shallow effective mass donor on the c1,c2,h lattice sites; the second consists equally of three spectra which based on the hyperfine and superhyperfine interactions are tentatively attributed to the c-axis aligned P-VC pair defect on the c1,c2,h lattice sites.