검색결과 : 13건
| No. | Article |
|---|---|
| 1 |
Si-SiC core-shell nanowires Ollivier M, Latu-Romain L, Martin M, David S, Mantoux A, Bano E, Souliere V, Ferro G, Baron T Journal of Crystal Growth, 363, 158, 2013 |
| 2 |
Investigation of localized versus uniform strain as a performance booster in InAs Tunnel-FETs Conzatti F, Pala MG, Esseni D, Bano E Solid-State Electronics, 88, 49, 2013 |
| 3 |
Characterisation of 4H-SiC pin diodes by micro-Raman scattering and photoemission Thuaire A, Mermoux M, Crisci A, Camara N, Bano E, Baillet F, Pernot E Materials Science Forum, 483, 437, 2005 |
| 4 |
Forward-bias degradation in 4H-SiC p(+)nn(+) diodes: Influence of the mesa etching Camara N, Thuaire A, Bano E, Zekentes K Materials Science Forum, 483, 773, 2005 |
| 5 |
Current transport mechanisms in 4H-SiC pin diodes. Camara N, Bano E, Zekentes K Materials Science Forum, 457-460, 1017, 2004 |
| 6 |
QuaSiC Smart-Cut (R) substrates for SiC high power devices Letertre F, Jalaguier E, Di Cioccio L, Templier F, Bluet JM, Banc C, Matko I, Chenevier B, Bano E, Guillot G, Billon T, Aspar B, Madar R, Ghyselen B Materials Science Forum, 389-3, 151, 2002 |
| 7 |
Photon emission analysis of defect-free 4H-SiC pn diodes in avalanche regime Banc C, Bano E, Ouisse T, Vassilevski K, Zekentes K Materials Science Forum, 389-3, 1293, 2002 |
| 8 |
4H-SiC IMPATT diode fabrication and testing Vassilevski KV, Zorenko AV, Zekentes K, Tsagaraki K, Bano E, Banc C, Lebedev AA Materials Science Forum, 389-3, 1353, 2002 |
| 9 |
Hot-carrier luminescence in 4H-SiC MESFETs Banc C, Bano E, Ouisse T, Noblanc O, Brylinski C Materials Science Forum, 389-3, 1371, 2002 |
| 10 |
SiC power devices on QUASIC and SiCOI Smart-Cut (R) substrates: First demonstrations Letertre F, Daval N, Templier F, Bano E, Planson D, Di Ciocco L, Jalaguier E, Bluet JM, Billon T, Madar R, Chante JP Materials Science Forum, 433-4, 813, 2002 |