검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Improved performance of In2Se3 nanowire phase-change memory with SiO2 passivation Baek CK, Kang D, Kim J, Jin B, Rim T, Park S, Meyyappan M, Jeong YH, Lee JS Solid-State Electronics, 80, 10, 2013 |
| 2 |
Electrical characteristics of 20-nm junctionless Si nanowire transistors Park CH, Ko MD, Kim KH, Baek RH, Sohn CW, Baek CK, Park S, Deen MJ, Jeong YH, Lee JS Solid-State Electronics, 73, 7, 2012 |
| 3 |
A comparative study of the DRAM leakage mechanism for planar and recessed channel MOSFETs Lee MJ, Baek CK, Park S, Chung IY, Park YJ Solid-State Electronics, 53(9), 998, 2009 |
| 4 |
Electrospinning of poly(vinylidene fluoride)/dimethylformamide solutions with carbon nanotubes Seoul C, Kim YT, Baek CK Journal of Polymer Science Part B: Polymer Physics, 41(13), 1572, 2003 |