| 1 |
Numerical simulation of planar BaSi2 based Schottky junction solar cells toward high efficiency
Chen L, Chen H, Deng QR, Wang GM, Wang SG
Solid-State Electronics, 149, 46, 2018 |
| 2 |
Formation of large-grain-sized BaSi2 epitaxial layers grown on Si(111) by molecular beam epitaxy
Baba M, Toh K, Toko K, Hara KO, Usami N, Saito N, Yoshizawa N, Suemasu T
Journal of Crystal Growth, 378, 193, 2013 |
| 3 |
Large photoresponsivity in semiconducting BaSi2 epitaxial films grown on Si(001) substrates by molecular beam epitaxy
Koike S, Toh K, Baba M, Toko K, Hara KO, Usami N, Saito N, Yoshizawa N, Suemasu T
Journal of Crystal Growth, 378, 198, 2013 |
| 4 |
Molecular beam epitaxy of boron doped p-type BaSi2 epitaxial films on Si(111) substrates for thin-film solar cells
Khan MA, Hara KO, Nakamura K, Du WJ, Baba M, Toh K, Suzuno M, Toko K, Usami N, Suemasu T
Journal of Crystal Growth, 378, 201, 2013 |
| 5 |
Basic properties of Sr1-xBaxSi2
Imai M, Sato A, Kimura T, Aoyagi T
Thin Solid Films, 519(24), 8496, 2011 |
| 6 |
Photoresponse properties of BaSi2 epitaxial films grown on the tunnel junction for high-efficiency thin-film solar cells
Suemasu T, Saito T, Toh K, Okada A, Khan MA
Thin Solid Films, 519(24), 8501, 2011 |
| 7 |
Molecular beam epitaxy of semiconductor (BaSi2)metal (CoSi2) hybrid structures on Si(111) substrates for photovoltaic application
Ichikawa Y, Kobayashi M, Sasase M, Suemasu T
Applied Surface Science, 254(23), 7963, 2008 |
| 8 |
Molecular beam epitaxy of band gap tunable ternary semiconducting silicides Ba1-xSrxSi2 for photovoltaic application
Suemasu T, Morita K, Kobayashi M
Journal of Crystal Growth, 301, 680, 2007 |
| 9 |
Effects of Sr addition on crystallinity and optical absorption edges in ternary semiconducting silicide Ba1-xSrxSi2
Morita K, Kobayashi M, Suemasu T
Thin Solid Films, 515(22), 8216, 2007 |
| 10 |
Consideration of the band-gap tunability of BaSi2 by alloying with Ca or Sr based on the electronic structure calculations
Imai Y, Watanabe A
Thin Solid Films, 515(22), 8219, 2007 |
