We have succeeded in growing semiconductor (BaSi2)/metal (CoSi2) hybrid structures epitaxially on Si(1 1 1) by molecular beam epitaxy for the first time. When the thickness oc CoSi2 was approximately 55 nm, the interface between the CoSi2 and BaSi2 layers was found to be rough from transmission electron microscopy observation. The interface became sharp and the BaSi2/CoSi2 hybrid structures were epitaxially grown when the thickness of CoSi2 was decreased down to approximately 27 nm, and the growth temperature was properly chosen.