검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
The effects of grain boundary scattering on electrical resistivity of Ag/NiSi suicide films formed on silicon substrate at 500 degrees C by RTA Utlu G, Artunc N Applied Surface Science, 310, 248, 2014 |
| 2 |
Temperature and thickness dependence of the grain boundary scattering in the Ni-Si suicide films formed on silicon substrate at 500 degrees C by RTA Utlu G, Artunc N, Selvi S Materials Chemistry and Physics, 132(2-3), 421, 2012 |
| 3 |
Structural and electrical characterization of the nickel silicide films formed at 850 degrees C by rapid thermal annealing of the Ni/Si(100) films Utlu G, Artunc N, Budak S, Tari S Applied Surface Science, 256(16), 5069, 2010 |