화학공학소재연구정보센터
검색결과 : 8건
No. Article
1 Electric-field induced structural transition in vertical MoTe2- and Mo1-xWxTe2-based resistive memories
Zhang F, Zhang HR, Krylyuk S, Milligan CA, Zhu YQ, Zemlyanov DY, Bendersky LA, Burton BP, Davydov AV, Appenzeller J
Nature Materials, 18(1), 55, 2019
2 Electric-field induced structural transition in vertical MoTe2- and Mo1-xWxTe2-based resistive memories
Zhang F, Zhang HR, Krylyuk S, Milligan CA, Zhu YQ, Zemlyanov DY, Bendersky LA, Burton BP, Davydov AV, Appenzeller J
Nature Materials, 18(1), 55, 2019
3 Impact of the dimensionality on the performance of tunneling FETs: Bulk versus one-dimensional devices
Knoch J, Mantl S, Appenzeller J
Solid-State Electronics, 51(4), 572, 2007
4 Comparison of transport properties in carbon nanotube field-effect transistors with Schottky contacts and doped source/drain contacts
Knoch J, Mantl S, Appenzeller J
Solid-State Electronics, 49(1), 73, 2005
5 Transistor structures for the study of scaling in carbon nanotubes
Wind SJ, Radosavljevic M, Appenzeller J, Avouris P
Journal of Vacuum Science & Technology B, 21(6), 2856, 2003
6 Fabrication and electrical characterization of top gate single-wall carbon nanotube field-effect transistors
Wind SJ, Appenzeller J, Martel R, Derycke V, Avouris P
Journal of Vacuum Science & Technology B, 20(6), 2798, 2002
7 Technology for the fabrication of ultrashort channel metal-oxide-semiconductor field-effect transistors
Knoch J, Appenzeller J, Lengeler B, Martel R, Solomon P, Avouris P, Dieker C, Lu Y, Wang KL, Scholvin J, del Alamo JA
Journal of Vacuum Science & Technology A, 19(4), 1737, 2001
8 Ultrathin 600 degrees C wet thermal silicon dioxide
Appenzeller J, del Alamo JA, Martel R, Chan K, Solomon P
Electrochemical and Solid State Letters, 3(2), 84, 2000