검색결과 : 8건
No. | Article |
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1 |
Electric-field induced structural transition in vertical MoTe2- and Mo1-xWxTe2-based resistive memories Zhang F, Zhang HR, Krylyuk S, Milligan CA, Zhu YQ, Zemlyanov DY, Bendersky LA, Burton BP, Davydov AV, Appenzeller J Nature Materials, 18(1), 55, 2019 |
2 |
Electric-field induced structural transition in vertical MoTe2- and Mo1-xWxTe2-based resistive memories Zhang F, Zhang HR, Krylyuk S, Milligan CA, Zhu YQ, Zemlyanov DY, Bendersky LA, Burton BP, Davydov AV, Appenzeller J Nature Materials, 18(1), 55, 2019 |
3 |
Impact of the dimensionality on the performance of tunneling FETs: Bulk versus one-dimensional devices Knoch J, Mantl S, Appenzeller J Solid-State Electronics, 51(4), 572, 2007 |
4 |
Comparison of transport properties in carbon nanotube field-effect transistors with Schottky contacts and doped source/drain contacts Knoch J, Mantl S, Appenzeller J Solid-State Electronics, 49(1), 73, 2005 |
5 |
Transistor structures for the study of scaling in carbon nanotubes Wind SJ, Radosavljevic M, Appenzeller J, Avouris P Journal of Vacuum Science & Technology B, 21(6), 2856, 2003 |
6 |
Fabrication and electrical characterization of top gate single-wall carbon nanotube field-effect transistors Wind SJ, Appenzeller J, Martel R, Derycke V, Avouris P Journal of Vacuum Science & Technology B, 20(6), 2798, 2002 |
7 |
Technology for the fabrication of ultrashort channel metal-oxide-semiconductor field-effect transistors Knoch J, Appenzeller J, Lengeler B, Martel R, Solomon P, Avouris P, Dieker C, Lu Y, Wang KL, Scholvin J, del Alamo JA Journal of Vacuum Science & Technology A, 19(4), 1737, 2001 |
8 |
Ultrathin 600 degrees C wet thermal silicon dioxide Appenzeller J, del Alamo JA, Martel R, Chan K, Solomon P Electrochemical and Solid State Letters, 3(2), 84, 2000 |