This paper describes the electrical quality of gate oxides grown at 600 degrees C in a wet oxygen environment. The oxides were grown by carrying out the pyrogenic reaction of H-2 and O-2 at 750 degrees C while keeping the temperature in the sample region at 600 degrees C. Using this approach SiO2 films with thicknesses ranging from 25 to 45 Angstrom have been grown. They exhibit leakage current densities comparable to high-temperature thermal oxide films of the same thickness grown in dry oxygen at higher temperatures. Breakdown fields were found to be around 12 MV/cm independent of substrate orientation. Interface trap densities were determined to be in the 10(10) cm(-2) eV(-1) range. Growth rates of 5 Angstrom/h were measured for (100) oriented substrates and 6 Angstrom/h for (111) surfaces.