검색결과 : 8건
| No. | Article |
|---|---|
| 1 |
Minimization of specific contact resistance in multiple gate NFETs by selective epitaxial growth of Si in the HDD regions Dixit A, Anil KG, Rooyackers R, Leys F, Kaiser M, Collaert N, De Meyer K, Jurczak M, Biesemans S Solid-State Electronics, 50(4), 587, 2006 |
| 2 |
Minimization of MuGFET source/drain resistance using wrap-around NiSi-HDD contacts Dixit A, Anil KG, Collaert N, Zimmerman P, Jurczak M, De Meyer K Solid-State Electronics, 50(7-8), 1466, 2006 |
| 3 |
Shift and ratio method revisited: extraction of the fin width in multi-gate devices Collaert N, Dixit A, Anil KG, Rooyackers R, Veloso A, De Meyer K Solid-State Electronics, 49(5), 763, 2005 |
| 4 |
A detailed experimental investigation of impact ionization in n-channel metal-oxide-semiconductor field-effect-transistors at very low drain voltages Anil KG, Mahapatra S, Eisele I Solid-State Electronics, 47(6), 995, 2003 |
| 5 |
Enhancement of device performance in vertical sub-100 nm MOS devices due to local channel doping Fink C, Anil KG, Geiger H, Hansch W, Kaesen F, Schulze J, Sulima T, Eisele I Solid-State Electronics, 46(3), 387, 2002 |
| 6 |
MBE-grown vertical power-MOSFETs with 100-nm channel length Fink C, Anil KG, Hansch W, Sedlmaier S, Schulze J, Eisele I Thin Solid Films, 380(1-2), 207, 2000 |
| 7 |
Optimization of breakdown behaviour and short channel effects in MBE-grown vertical MOS-devices with local channel doping Fink C, Anil KG, Geiger H, Hansch W, Schulze J, Sulima T, Eisele I Thin Solid Films, 369(1-2), 383, 2000 |
| 8 |
Optimization of the channel doping profile of vertical sub-100 nm MOSFETs Kaesen F, Fink C, Anil KG, Hansch W, Doll T, Grabolla T, Schreiber H, Eisele I Thin Solid Films, 336(1-2), 309, 1998 |