검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
Temperature dependence of charge transport in zinc oxide nanosheet source-gated transistors Dahiya AS, Opoku C, Cayrel F, Valente D, Poulin-Vittrant G, Camara N, Alquier D Thin Solid Films, 617, 114, 2016 |
| 2 |
Surface state of GaN after rapid-thermal-annealing using AlN cap-layer El-Zammar G, Khalfaoui W, Oheix T, Yvon A, Collard E, Cayrel F, Alquier D Applied Surface Science, 355, 1044, 2015 |
| 3 |
Characterization of in-depth cavity distribution after thermal annealing of helium-implanted silicon and gallium nitride Fodor B, Cayrel F, Agocs E, Alquier D, Fried M, Petrik P Thin Solid Films, 571, 567, 2014 |
| 4 |
Low Stress Heteroepitaxial 3C-SiC Films Characterized by Microstructure Fabrication and Finite Elements Analysis Anzalone R, Camarda M, Locke C, Alquier D, Severino A, Italia M, Rodilosso D, Tringali C, La Magna A, Foti G, Saddow SE, La Via F, D'Arrigo G Journal of the Electrochemical Society, 157(4), H438, 2010 |
| 5 |
Enhancement of He-induced cavities in silicon by hydrogen plasma treatment Liu CL, Ntsoenzok E, Vengurlekar A, Ashok S, Alquier D, Ruault MO, Dubois C Journal of Vacuum Science & Technology B, 23(3), 990, 2005 |
| 6 |
Depth distribution of disorder and cavities in high dose helium implanted silicon characterized by spectroscopic ellipsometry Petrik P, Cayrel F, Fried M, Polgar O, Lohner I, Vincent L, Alquier D, Gyulai J Thin Solid Films, 455-56, 344, 2004 |