검색결과 : 10건
| No. | Article |
|---|---|
| 1 |
Growth and magnetic properties of MnAs/InAs hybrid structure on GaAs(111)B Islam ME, Akabori M Journal of Crystal Growth, 463, 86, 2017 |
| 2 |
Selective area molecular beam epitaxy of InAs on GaAs (110) masked substrates for direct fabrication of planar nanowire field-effect transistors Akabori M, Murakami T, Yamada S Journal of Crystal Growth, 345(1), 22, 2012 |
| 3 |
MOVPE of n-doped GaAs and modulation doped GaAs/AlGaAs nanowires Sladek K, Klinger V, Wensorra J, Akabori M, Hardtdegen H, Grutzmacher D Journal of Crystal Growth, 312(5), 635, 2010 |
| 4 |
Influence of growth temperature on the selective area MOVPE of InAs nanowires on GaAs (111) B using N-2 carrier gas Akabori M, Sladek K, Hardtdegen H, Schapers T, Grutzmacher D Journal of Crystal Growth, 311(15), 3813, 2009 |
| 5 |
InxGa1-xAs/InP selective area metal-organic vapor phase epitaxy for non-magnetic semiconductor spintronics Akabori M, Guzenko VA, Schapers T, Hardtdegen H Journal of Crystal Growth, 310(23), 4821, 2008 |
| 6 |
Formation of AlxGa1-xAs periodic array of micro-hexagonal pillars and air holes by selective area MOVPE Takeda J, Akabori M, Motohisa J, Fukui T Applied Surface Science, 190(1-4), 236, 2002 |
| 7 |
The standard molar enthalpy of formation of UNCI Akabori M, Kobayashi F, Hayashi H, Ogawa T, Huntelaar ME, Booij AS, van Vlaanderen P Journal of Chemical Thermodynamics, 34(9), 1461, 2002 |
| 8 |
Dependence on In content of InxGa1-xAs quantum dots grown along GaAs multiatomic steps by MOVPE Ishihara T, Lee S, Akabori M, Motohisa J, Fukui T Journal of Crystal Growth, 237, 1476, 2002 |
| 9 |
The initial stage of InGaAs growth by MOVPE on multiatomic-stepped GaAs structures Lee S, Akabori M, Shirahata T, Takada K, Motohisa J, Fukui T Journal of Crystal Growth, 231(1-2), 75, 2001 |
| 10 |
Incorporation mechanism of Si during delta-doping in GaAs singular and vicinal surfaces Motohisa J, Tazaki C, Akabori M, Fukui T Journal of Crystal Growth, 221, 47, 2000 |