| 1 |
Orientation-dependent dissolution and growth kinetics of InxGa1-xSb by vertical gradient freezing method under microgravity
Kumar VN, Hayakawa Y, Arivanandhan M, Rajesh G, Koyama T, Momose Y, Ozawa T, Okano Y, Inatomi Y
Journal of Crystal Growth, 496, 15, 2018 |
| 2 |
Concept and method to create a distinct low-temperature region in a Si melt for growth of a Si single ingot with a large diameter ratio using the noncontact crucible method
Nakajima K, Ono S, Itoh H
Journal of Crystal Growth, 499, 55, 2018 |
| 3 |
Investigation of dislocation cluster evolution during directional solidification of multicrystalline silicon
Oriwol D, Trempa M, Sylla L, Leipner HS
Journal of Crystal Growth, 463, 1, 2017 |
| 4 |
Effects of a high magnetic field on the primary zinc-rich crystals in hypoeutectic Zn-Sn alloy
Li L, Ban CY, Shi XC, Zhang HT, Zuo YB, Zhu QF, Wang XJ, Zhang H, Cui JZ, Nagatimi H
Journal of Crystal Growth, 463, 59, 2017 |
| 5 |
Single-grain Si TFTs and circuits fabricated through advanced excimer-laser crystallization
Ishihara R, Rana V, He M, Hiroshima Y, Inoue S, Metselaar W, Beenakker K
Solid-State Electronics, 52(3), 353, 2008 |
| 6 |
Extracting contours of crystals
Singer HM, Bilgram JH
Journal of Crystal Growth, 261(1), 122, 2004 |
