InxGa1-xSb crystals were grown from (1 1 0), (1 1 1)A, and(l 1 1 )B planes of GaSb under microgravity and their dissolution and growth kinetics were discussed. The dissolution geometry is independent of orientation even when the rate of dissolution is varied. The growth rate of (1 1 0) was lied in-between (1 1 1 )B and (1 1 1 )A experiments. The growth kinetics are largely affected by the dissolution process through the establishment of a concentration gradient in the melt. (C) 2018 Elsevier B.V. All rights reserved.