1 |
Coupling in ATP synthesis: Test of thermodynamic consistency and formulation in terms of the principle of least action Nath S Chemical Physics Letters, 723, 118, 2019 |
2 |
Jets of boiling-up water injected by a short slit nozzle Reshetnikov AV, Busov KA, Mazheiko NA, Skokov VN International Journal of Heat and Mass Transfer, 130, 523, 2019 |
3 |
Suppression of contact noise in a study on 1/f noise as a function of film thickness in Al-doped ZnO Achahour A, Leroy G, Vandamme LKJ, Ayachi B, Duponchel B, Waldhoff N, Blary K, Vilcot JP Thin Solid Films, 645, 70, 2018 |
4 |
Structural mechanism underlying regulation of human EFhd2/Swiprosin-1 actin-bundling activity by Ser183 phosphorylation Park KR, An JY, Kang JY, Lee JG, Lee Y, Mun SA, Jun CD, Song WK, Eom SH Biochemical and Biophysical Research Communications, 483(1), 442, 2017 |
5 |
Phosphorylation of rat brain purified mitochondrial Voltage-Dependent Anion Channel by c-Jun N-terminal kinase-3 modifies open-channel noise Gupta R Biochemical and Biophysical Research Communications, 490(4), 1221, 2017 |
6 |
Low frequency noise assessment in n- and p-channel sub-10 nm triple-gate FinFETs: Part I: Theory and methodology Boudier D, Cretu B, Simoen E, Carin R, Veloso A, Collaert N, Thean A Solid-State Electronics, 128, 102, 2017 |
7 |
Low frequency noise assessment in n- and p-channel sub-10 nm triple-gate FinFETs: Part II: Measurements and results Boudier D, Cretu B, Simoen E, Carin R, Veloso A, Collaert N, Thean A Solid-State Electronics, 128, 109, 2017 |
8 |
Hydrodynamic response to explosive boiling-up in a jet of superheated water Reshetnikov AV, Mazheiko NA, Skokov VN, Koverda VP International Journal of Heat and Mass Transfer, 85, 965, 2015 |
9 |
Methodology for 1/f noise parameter extraction for high-voltage MOSFETs Mavredakis N, Pflanzl W, Seebacher E, Bucher M Solid-State Electronics, 103, 202, 2015 |
10 |
Impact of processing and back-gate biasing conditions on the low-frequency noise of ultra-thin buried oxide silicon-on-insulator nMOSFETs Kudina V, Garbar N, Simoen E, Claeys C Solid-State Electronics, 105, 37, 2015 |