| 1 |
Characterization of high-dose and high-energy implanted gate and source diode and analysis of lateral spreading of p gate profile in high voltage SiC static induction transistors
Onose H, Kobayashi Y, Onuki J
Solid-State Electronics, 129, 200, 2017 |
| 2 |
Effects of junction defect healing in Germanium n-MOSFET through thermal annealing
Jung WS, Park JH
Current Applied Physics, 15(1), 55, 2015 |
| 3 |
고각 환형 암시야 주사투과전자현미경기법과 투과전자현미경기법을 이용한 상용 청색 발광다이오드의 종합적인 구조분석
김동엽, 홍순구, 정태훈, 이상헌, 백종협
Korean Journal of Materials Research, 25(1), 1, 2015 |
| 4 |
Electronic transport for graphene/n-type Si Schottky diodes with and without H2O2 treatment
Lin JH, Zeng JJ, Lin YJ
Thin Solid Films, 550, 582, 2014 |
| 5 |
Current transport mechanism of heterojunction diodes based on the sol-gel p-type ZnO and n-type Si with H2O2 treatment
He GR, Lin YJ
Materials Chemistry and Physics, 136(1), 179, 2012 |
| 6 |
Hot zone design for controlled growth to mitigate cracking in laser crystal growth
Zhang H, Zheng LL, Fang HS
Journal of Crystal Growth, 318(1), 695, 2011 |
| 7 |
Midgap levels in As-grown 4H-SiC epilayers investigated by DLTS
Danno K, Kimoto T, Matsunami H
Materials Science Forum, 483, 355, 2005 |
| 8 |
Challenges and first results of SiC Schottky diode manufacturing using a 3 inch technology
Treu M, Rupp R, Brunner H, Dahlquist F, Hecht C
Materials Science Forum, 457-460, 981, 2004 |
| 9 |
High-power SiC diodes: Characteristics, reliability and relation to material defects
Lendenmann H, Dahlquist F, Bergman JP, Bleichner H, Hallin C
Materials Science Forum, 389-3, 1259, 2002 |
| 10 |
Degradation in SiC bipolar devices: Sources and consequences of electrically active dislocations in SiC
Lendenmann H, Bergman JP, Dahlquist F, Hallin C
Materials Science Forum, 433-4, 901, 2002 |
