The paper will describe the challenges, advantages and first results of manufacturing SiC Schottky diodes using a 3 inch technology. it will be shown that it is possible to achieve electrical properties with today's 3 inch wafers which are about equal to the results on 2 inch. For base material cost reduction purpose a 4degrees off-orientation was set as a new standard for 3 inch 4H wafers generating additional challenges on the epitaxy growth process with respect to surface morphology. Results of doping homogeneity and detailed defect density measurements will be presented from epitaxy processes on substrates with such reduced off-orientation. The homogeneity of the Schottky barrier, of the forward voltage drop, and of the reverse current will be discussed.