| 학회 | 한국재료학회 |
| 학술대회 | 2016년 봄 (05/18 ~ 05/20, 여수 디오션리조트 ) |
| 권호 | 22권 1호 |
| 발표분야 | A. 전자/반도체 재료 분과 |
| 제목 | Facile Synthesis of SnS-SnS2 Heterostructure p-n Diode |
| 초록 | After the discovery of graphene and its extraordinary physical properties, other two-dimensional layered materials are also highlighted to become promising candidates for future nanotechnology. Sn-sulfides are one of the interesting layered materials which have different crystal phases such as hexagonal SnS2 and orthorhombic SnS. These two materials show different properties such as SnS2 showing n-type whereas SnS showing p-type. Recently individual growth and artificial stacking of these two materials have been demonstrated. In this work, by simply removing sulfur atoms from the top part of as-exfoliated SnS2 single crystal, we could achieve a facile method to synthesize SnS(p-type) and SnS2(n-type) vertical heterostructure. To confirm our method, we conducted Raman, TEM, and XPS measurements and showed that the crystal is indeed a heterostructure. Furthermore, we fabricated Graphene-SnS2-SnS-Graphene vertical p-n diode to confirm rectifying behavior and photoresponse of the device. |
| 저자 | Jung Ho Kim1, Seok Joon Yun2, Young Hee Lee3 |
| 소속 | 1Center for Integrated Nanostructure Physics (CINAP), 2Institute for Basic Science (IBS), 3Sungkyunkwan Univ. |
| 키워드 | SnS<SUB>2</SUB>; TMD; van der waals; p-n diode; optoelectronic; solar cell |
