| 초록 |
Synthesis, and electric, optical property modulation of low-dimensional metal oxide semiconductor material are issued at nano-device application. However, material modulation like doping needs uneconomic, and difficult to synthesis like high vacuum apparatus, or gas phase growth, etc. Alternatively, easy, and economic synthesis of Sb-doped ZnO nanorod arrays are progressed using simple hydrothermal solution growth in 95 °C. ZnO nanorod of Wurtzite crystal is synthesized, and Sb atoms are substitutionally doped to Zn atoms. The concentration of Sb in ZnO is controllable to a certain degree, but not exact proportion. Sb dopants, and Sb-induced oxygen vacancies pile up the electron concentration of ZnO NRAs, and more ambient oxygen molecules are absorbed on Sb-doped ZnO NR surface. For using this property change, UV sensor devices are fabricated, and improved reversible UV sensing performance are observed that photocurrent are 8.88 times increased after Sb doping treatment. 2 order Moreover, UV sensing performance is clearly confirmed under extremely low bias at 10-6 V, and the photocurrent increase by 2 orders of magnitude under UV illumination. |
