| 학회 | 한국재료학회 |
| 학술대회 | 2011년 가을 (10/27 ~ 10/29, 신라대학교) |
| 권호 | 17권 2호 |
| 발표분야 | B. Nanomaterials and Processing Technology(나노소재기술) |
| 제목 | Transparent Capacitor of the Bi2Mg2/3Nb4/3O7(BMNO)-Bi Nanostructured Thin Films grown at Room Temperature |
| 초록 | BMNO dielectric materials with a pyrochlore structure have been chosen and they have quite high dielectric constants about 210 for the bulk material. In the case of thin films, 200-nm-thick BMNO films deposited at room temperature showed a low leakage current density of about 10-8 A/cm2 at 3 V and a dielectric constant of about 45 at 100 kHz. Because high dielectric constant BMNO thin films kept an amorphous phase at a high temperature above 900oC. High dielectric constant BMNO thin films grown at room temperature have many applications for flexible electronic devices. However, because the dielectric constant of the BMNO films deposited at room temperature is still low, percolative BMNO films (i.e., those were grown in a pure argon atmosphere) sandwiched between ultra-thin BMNO films grown in an oxygen and argon mixture have greater dielectric constants than standard BMNO films. However, they still showed a leakage problem at a high voltage application. Accordingly, a new nano-structure that uses BMNO was required to construct the films with a dielectric constant higher than that of its bulk material. The fundamental reason that the BMNO-Bi nano-composite films grown by RF-Sputtering deposition had a dielectric constant higher than that of the bulk material was addressed in the present study. Also we used the graphene as bottom electrode instead of the Cu bottom electrode. At first, we got the high leakage current density value relatively. but through this experiment, we could get improved leakage current density value. |
| 저자 | 송현아, 나신혜, 정현준, 윤순길 |
| 소속 | 충남대 |
| 키워드 | BMNO; Capacitor; Graphene; Nano-composite; Rf-sputtering |
