| 초록 |
Low dielectric materials (low-k) have been used as interlayer in Cu microprocessors to improve the performance of microelectronics over the years. However, continuous shrinkage of the device demands new ultralow dielectrics, which would replace the current low-k materials. The introduction of nanopores into low dielectric materials is key issue in order to reduce the dielectric constant. In addition, high mechanical properties (E＞ 6 GPa for CMP process) are also necessary with low dielectric constant (k= 2.1~2.3 for 25 nm device). To optimize these properties, we used ozone treatment during sol-gel reaction. The ozone treatment converted the alkoxy groups in the dielectric film into silanol groups, and resulted in increased compatibility between the porogen and matrix. We prepared matrices which are copolymer of methyl trimethoxysilane and 1,2-bis(triethoxysilyl) ethane (20 mol%, 25 mol%). Moreover, reactive porogens were synthesized by allylation and hydrosilylation of polyols. |
