| 초록 |
We have fabricated high performance metal oxide TFTs with aluminium oxide gate dielectrics based on combustion chemistry by solution process. Combustion reaction provides the high self-generated energy which can be utilized to convert precursors into the corresponding oxides at low temperatures. For the fabrication of low-temperature, solution-based gate dielectric film with proper gate dielectric properties, combustive aluminium precursors with organic ingredients were designed and prepared. In this study, aluminium oxide gate dielectric layers were spin-coated from a solution of aluminium precursors in 2-methoxyethanol and annealed at 250 ℃. Active layers were then spin-coated from ZnO precursors in ammonia. We have investigated structural and morphological properties of aluminium oxide gate dielectrics for metal oxide TFTs fabricated in various processing conditions by scanning electron microscopy, energy dispersive spectroscopy and x-ray diffraction analysis. |
