| 초록 |
Crossbar arrayed resistive switching RAM (ReRAM) has a problem of a sneak current flowing to an adjacent cell, so that it needs additional structure like a selector or transistor together. However, since these structures have difficulty in scale down, there has been a lot of research on a complementary resistive switch (CRS) memory capable of controlling sneak current without a selector layer or a transistor. CRS memory has a ‘M(metal)I(insulator)M(metal)I(insulator)M(metal)’ structure like two ReRAMs attached. However, in case of CRS memory stacked planar structure, conductive filaments (CFs) are formed randomly and multiply. It is difficult to secure the reliability of CRS behavior. To solve this problem, wire-shaped CRS filler was synthesized to form core-shell structure and dispersed in polymer matrix to obtain ‘MIMIM’ structure. Extensive electrical analysis and theoretical simulation confirmed that CFs were controlled by electric field confinement. |
