| 학회 |
한국재료학회 |
| 학술대회 |
2010년 가을 (11/11 ~ 11/12, 무주리조트) |
| 권호 |
16권 2호 |
| 발표분야 |
A. Information and Sensor Materials(정보소재 및 센서) |
| 제목 |
Flexible ferroelectric thin film capacitor on plastic substrate |
| 초록 |
We investigated the fabrication of high performance flexible ferroelectric(PZT) capacitor on plastic substrate. The ferroelectric active layer was formed between Pt electrodes by Sol-Gel method on sacrificial(a-Si) and buffer(SiO2) layer. These ferroelectric capacitors were patterned by general photolithographic method with optimized layouts. After etching and sacrificial layer removing process, these capacitors were transferred on plastic substrate using dry transfer method. The electrical properties of transferred ferroelectric capacitors were similar to that of general ferroelectric devices on rigid substrate. These properties suggest promising applications in flexible electronic systems. |
| 저자 |
노종현1, 김상진2, 허욱1, 이내응1, 이환수2, 안종현1
|
| 소속 |
1성균관대, 2삼성전기 |
| 키워드 |
Ferroelectric thin film; Flexible electronics; Non-volatile memory; PZT
|
| E-Mail |
|
