| 초록 |
Cu2ZnSn(S,Se)4(CZTSSe) has been emerged as an attractive candidate to replace CdTe, CIGS, silicon based thin film solar cells (TFSCs). In a present study, In doped SnO2 (ITO) thin films as a window layer in CZTSSe TFSCs were optimized to improve a device efficiency. AZO thin films are deposited on soda lime glass (SLG) substrate by radio frequency (RF) magnetron sputtering by varying the substrate temperature during the deposition. The influence of different substrate temperature on the morphological, optical and electrical properties of AZO thin films as well as on the CZTSSe TFSCs efficiency were investigated. All the deposited thin films showed a uniform microstructure with transmittance of over 85% in visible region though it possesses comparable band gap and resistivity differences. Especially, ITO thin films deposited at 500℃ showed high optical band gap energies of ~ 4.04 eV with transmittance of ~ 90% in visible region. Also, the ITO thin film deposited at 500℃ showed improved electrical properties having lowest resistivity of 1.21 x 10-4 Ωcm, higher carrier concentration of 1.66 x 1020 cm-3, high mobility of 30.9 cm2v-1s-1 and lower sheet resistance of 6.4 Ω/SQ respectively. The solar cell applied ITO as the window layer showed power conversion efficiency of 6.31%. |
