| 학회 |
한국재료학회 |
| 학술대회 |
2017년 봄 (05/17 ~ 05/19, 목포 현대호텔) |
| 권호 |
23권 1호 |
| 발표분야 |
A. 전자/반도체 재료 분과 |
| 제목 |
Self-stabilization of SiC single crystals during top-seed solution growth |
| 초록 |
Silicon carbide (SiC) single crystal is a wide bandgap (2.9 ~ 3.3 eV) semiconductor that offers great performance in high-voltage, high frequency and high temperature applications. Nowadays most commercial SiC wafers are made by physical vapor transport (PVT) method, however, the quality is not good enough for electronic devices. Top-seeded solution growth (TSSG) is an alternative method for high quality SiC single crystals. Controlling of the step bunching phenomena is a key point for growing high quality SiC by TSSG. Bunched steps make the surface rough and induce defects and dislocations. In this study, we investigated the relationship between solution flow and step bunching during solution growth. We grew SiC single crystals on the off-axis seed crystals with fixed and rotating crucibles and also calculated the solution flow by COMSOL Multiphysics. The solution under the seed crystals is nearly stagnant with fixed crucibles and the grown crystal has smooth surface. On the contrary, there is a strong upward flow with rotating crucibles and the grown crystal shows severe step bunching. This is due to the self-stabilization. When the solution is nearly stagnant, carbon concentration on the surface is not uniform and it leads self-stabilization. But the weak convection of the solution caused lack of carbon source and trench defects. |
| 저자 |
변대섭1, 유영재1, 최수훈2, Ha Minh Tan1, 이명현1, 이원재2, 정성민1
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| 소속 |
1한국세라믹기술원 에너지환경소재본부, 2동의대 |
| 키워드 |
SiC; 결정성장; TSSG
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| E-Mail |
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