| 학회 |
한국재료학회 |
| 학술대회 |
2015년 가을 (11/25 ~ 11/27, 부산 해운대그랜드호텔) |
| 권호 |
21권 2호 |
| 발표분야 |
G. 나노/박막 재료 |
| 제목 |
Structural characterization of gallium oxides grown by plasma assisted molecular beam epitaxy |
| 초록 |
The Ga2O3 thin films of about 170 nm thickness were grown on c-plane sapphire substrates at various growth temperatures from 550 oC to 800 oC by plasma assisted molecular beam epitaxy (PAMBE). Structural characterization and surface morphology of the Ga2O3 thin films were investigated by X-ray diffraction (XRD), transmission electron microscopy (TEM) and atomic force microscope (AFM). The results showed that the (-201) oriented β-Ga2O3 thin films were grown on c-plane sapphire substrates consist of six-fold symmetry and β-Ga2O3 〈010〉 directions were parallel to Al2O3 〈11-20〉 directions. The ω-rocking curves measurement revealed the crystal quality of thin films increase with increasing of growth temperature. The surface morphology and rms roughness of Ga2O3 thin films depend strongly on the growth temperature. The rms roughness increases with increasing of growth temperature and attains maximum value at 650 oC and after that decreases when the growth temperature is increased further more. The rms roughness on 2x2 µm2 areas of thin films grown at 550 oC, 650 oC, 800 oC have values of 3.247 nm, 4.496 nm and 0.953 nm, respectively. |
| 저자 |
Duc Duy Le1, Soon-Ku Hong2, Trong Si Ngo1
|
| 소속 |
1Department of Advanced Materials Engineering, 2Chungnam National Univ. |
| 키워드 |
Ga<SUB>2</SUB>O<SUB>3</SUB>; c-plane sapphire; (PAMBE).
|
| E-Mail |
|
