| 학회 |
한국고분자학회 |
| 학술대회 |
2017년 가을 (10/11 ~ 10/13, 제주컨벤션센터) |
| 권호 |
42권 2호 |
| 발표분야 |
분자전자 부문위원회 I |
| 제목 |
One-pot surface modified and crosslinked Poly(ethylene-alt-maleic anhydride) gate insulator for the low-voltage operation of DNTT thin-film transistors. |
| 초록 |
In this study, we report the one-pot surface modification of poly(ethylene-alt-maleic anhydride) (PEMA) gate insulators crosslinked with 1,5-naphthalenediamine(1,5-NDA) for low-voltage organic thin-film transistors (OTFTs). The ultrathin crosslinked PEMA gate insulators have excellent electrical insulating properties. Gate insulator surface properties of the PEMA thin-film could be easily modified by adding poly(maleic anhydride-alt-1-octadecene) (PMAO) to the PEMA coating solution. The surface energy of the crosslinked PEMA with the surface modification decreased due to the octyl chains of PMAO. The results explain that the one-pot surface modification of the PEMA gate insulator is effective for improving the device performance of low-voltage OTFTs |
| 저자 |
유성미1, 서현진1, 이미혜1, 장광석2, 김윤호1
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| 소속 |
1한국화학(연), 2한경대 |
| 키워드 |
Polymer gate insulator; Organic thin-film transistors; low-voltage operation
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| E-Mail |
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