| 학회 | 한국재료학회 |
| 학술대회 | 2005년 봄 (05/26 ~ 05/27, 무주리조트) |
| 권호 | 11권 1호 |
| 발표분야 | 전자재료 |
| 제목 | MBE를 이용한 Si1-xMnx 박막의 성장 및 자기적 특성 |
| 초록 | Magnetic semiconductor Si1-xMnx were co- deposited on Si(100) substrates by MBE at low substrate temperature of 200oC and varying alloy composition (x). The Si oxide was thermally desorbed at a temperature of 1100oC for 30 min and then cooled slowly with the maximum rate is 1oC per second to substrate temperature. Growth rate was ~15Å/min and average film thickness was around 100nm. Thickness and composition were measured by utilizing an alpha-step and energy dispersive X-ray spectroscopy, respectively. Some of grown Si1-xMnx thin films were checked by X-ray photoelectron spectroscopy (XPS). X-ray analysis and TEM shows that the deposited Si1-xMnx semiconductor thin films are homogeneous phases. The electrical resistivities of Si1-xMnx semiconductor thin films are 6.0×10-4~1.2 ×10-2Ωcm at room temperature and decrease with increasing Mn concentration. Carries type, mobility and carrier concentration were obtained by Hall Effect measurement. The magnetic properties of the films were measured by superconducting quantum interference device (SQUID). Morphological properties of the deposited film have been investigated by Atomic force microscopy (AFM). The diameter and the height of islands which shown in AFM, increase with Mn concentration. Acknowledgement This work was supported by the Research Center for Advanced Magnetic Materials (RECAMM, Chungnam National University, Korea) and the Brain Korea 21 Program (BK21, the Ministry of Education & Human Resource Development, Korea). |
| 저자 | 찬티난안1, 유상수1, 임영언1, 김도진1, 김효진1, 오상준2, 김창수3, 류현3 |
| 소속 | 1충남대, 2한국기초과학지원(연), 3한국표준과학(연) |
| 키워드 | 묽은 자성 반도체; Si-mn system; Spin injection 소재 |
