| 학회 |
한국고분자학회 |
| 학술대회 |
2013년 가을 (10/11 ~ 10/12, 창원컨벤션센터) |
| 권호 |
38권 2호 |
| 발표분야 |
분자전자 부문위원회 |
| 제목 |
In/Ga-Free, Inkjet-Printed Charge Transfer Doping for Solution-Processed ZnO |
| 초록 |
Solution-processed zinc oxids (ZnO) are very attractive semiconductors for implementation into thin-film transistors (TFTs). We introduce a charge transfer doping layer (CTDL) onto ZnO TFT via solution processes such as drop casting and ink-jet printing. Doping was controlled upon tuning the underneath ZnO layer thickness and/or the grafting density of CTDL on the ZnO systematically. Doping turned out to be more effective on a thinner ZnO layer with higher grafting density. The opimized devices yield enhanced electron mobility around 4.2 cm2/Vsec with more than seven orders of magnitude in current modulation. Furthermore, the capability of simple threshold voltage-control was applied to demonstrate high-performance depletion load ZnO inverters based on selective deposition of CTDL by inkjet printing. We believe that the method presented in this report can provide new directions in low-cost, high performance, solution processed ZnO TFT researches. |
| 저자 |
유성훈1, 김범준1, 강문성2, 김세현3, 조정호1, 이준영1
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| 소속 |
1성균관대, 2숭실대, 3영남대 |
| 키워드 |
charge transfer doping layer; solution-processed zinc oxide; carrier mobility; thin-film transistor; depletion load inverter
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| E-Mail |
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