| 초록 |
In this work, we synthesized new types of solution-processable polydimethylsiloxane (PDMS) backboned PI with fluorinated monomer, and applied as gate dielectrics of OFETs and integrated circuits. New PI materials were prepared by polymerization between monomer 1 composed of PDMS and anhydride precursor and monomer 2 of fluorinated dianhydride precursor. In order to confirm its suitability as a gate dielectrics of OFETs, characteristics such as surface roughness, surface atomic analysis, and dielectric constant(k), leakage current properties were analyzed for the deposited PI films. Through these analyzations, our PI films with fluorine were identified, which can reliably compensate for electrically stable operation of OFETs and integrated circuits. As a results, synthesis of PI with a new backbone structure added with fluorine and fabrication of OFET devices with it can be useful for future development of practical electronic devices. |
