| 초록 |
To commercialize CIGS solar cell, it is necessary to use sputtering process because of fil uniformity. But direct synthesis of CIGS film from Cu-In-Ga metal precursor in Se atmosphere resulted in many large pores at the CIGS/Mo interface. To avoid the pores, Se-containing precursors have been developed to reduce the void at the CIGS interface. We utilized a CuGa/In:Se stacked precursor to solve the issue and were able to synthesize a pore-free CIGS film even below 500°C in vacuum. The amount of se in the precursor played a major factor for low-temperature synthesis. The CIGS film was characterized and applied to CIGS thin-film solar cell with various Se content by controlling Se flux. With an appropriate control of Se flux, 13.5% efficiency was obtained. Currently, we are trying to introduce a hole blocking layer on CIGS surface to increase open circuit voltage with various surface treatment. We will report the result in the Conference. |
