| 초록 |
Carbon nanotubes (CNTs) are promising materials for high performance, printable and flexible thin film transistor. However, as synthesized single-walled CNTs (SWNTs) show non-uniform electrical properties due to the mixture of metallic and semiconducting SWNTs. Selective separation of semiconducting SWNTs (s-SWNTs) using conjugated polymers has been developed with the aim of utilizing their superior properties and solution processibility. Solution processed s-SWNTs active layer have the advantages of low-cost, low-temperature device fabrication, but it is difficult to completely remove the polymer without additional post-treatment. The residual polymers and existence of multi-components hamper inter-charge transfer between each individual s-SWNTs. As a result, the device performance is degraded and the power consumption is increased. In this work, by introducing ferroelectric dielectric layer, the charge accumulation of the active layer is increased to enable low voltage operation. |
