| 초록 |
Recently, as device wafers have become thinner, a high degree of difficulty is required in the subsequent process. In particular, a temporary bonding debonding (TBDB) method using carrier wafer has been applied to prevent damage to the wafer during the process. However, the TBDB system composed of multi-layered siloxane polymer film has an issue that adhesion strength gradually increases as post-processing proceeds, and it causes de-bonding failure. In this research, it was confirmed that the major reason for adhesion increament is thermal hysteresis. And, the mechanism was studied by Raman spectroscopy, XPS, FT-IR analysis. To improve thermal stability of TBDB system, high-density films were suggested as a diffusion barrier and two kinds of methods, post-O¬2-plasma treatment and introduction of ALD were developed. Both methods were confirmed that barriers effectively block the glue diffusion and consequently make TBDB system thermal stable. |
