| 학회 |
한국재료학회 |
| 학술대회 |
2018년 가을 (11/07 ~ 11/09, 여수 디오션리조트) |
| 권호 |
24권 2호 |
| 발표분야 |
F. 광기능/디스플레이 재료 분과 |
| 제목 |
Schottky Potential Barrier Effect and Double Junction in Order to Enhance the Depletion Layer of Semiconductors |
| 초록 |
This study demonstrates the dependence of double junction of amorphous oxide semiconductor thin film transistors (TFTs). It was focused on the mobility of TFTs and two junction. The characteristic of TFTs were observed to the correlation between the junction at the interface and gate insulator, and the gate insulator were prepared by the changing of oxygen gas flows to make the various types of depletion layer. The gate insulator with high potential barrier due to the low ionic energy at a Poole-Frenkel contact was a suitable gate dielectric material to support the reduction of leakage current due to the high potential barriers. The transfer characteristic of TFTs was drastically affected by the properties of a gate insulator. The performance of TFTs on two junction was more improved then that with one junction because of having the higher potential barrier of Schottky contact instead of Ohmic contact with one junction. |
| 저자 |
오데레사 |
| 소속 |
청주대 |
| 키워드 |
LED; transistor; Schottky contact
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| E-Mail |
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