| 학회 |
한국고분자학회 |
| 학술대회 |
2021년 가을 (10/20 ~ 10/22, 경주컨벤션센터) |
| 권호 |
46권 2호 |
| 발표분야 |
분자전자 부문위원회 Ⅰ,Ⅱ |
| 제목 |
Realizing Long-term Synaptic Potentiation Using Fluoroalkylsilanes On ZnO/Li-ion Synaptic Transistor |
| 초록 |
Neuromorphic Computing is attracting much attention because it has advantages of fast processing speed and low power consumption compared to the von-Neumann architecture. Herein, we introduced a ZnO/fluoroalkylsilane(PFOTES) synaptic transistor using a PEGDMA-based Li-ion electrolyte as the gate insulator. Because Li-ions are more strongly attracted to the fluoroalkylsilanes with negative surface charge (electric double layer (EDL) effect) when gate pulse is applied, these synaptic transistors exhibit long-term potentiation maintained over 1,800 seconds. Also, we conducted Multi-layer perceptron simulation, a class of feedforward artificial neural networks. This synaptic transistor shows a high recognition accuracy of 89.71% with a wide dynamic range and a low nonlinearity. We believe that this study will contribute to expanding the application range of synaptic transistors. |
| 저자 |
진민호, 임창익, 이재학, 나현재, 김지연, 이해연, 김연상
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| 소속 |
서울대 |
| 키워드 |
synaptic transistor; neuromorphic computing; fluoroalkylsilane; long-term potentiation; electric-double layer effect
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| E-Mail |
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