| 학회 |
한국재료학회 |
| 학술대회 |
2005년 가을 (11/10 ~ 11/11, 한양대학교) |
| 권호 |
11권 2호 |
| 발표분야 |
반도체재료 |
| 제목 |
HfO2/SiOxNy/Si 게이트 구조의 열처리에 따른 열적 안정성과 전기적 특성 |
| 초록 |
The effects of conventional annealing were investigated by rapid thermal annealing (RTA) in N2 and O2 ambient (600-1000°C, 30s) on HfO2/SiOxNy/Si gate dielectric structure. The small amounts (~5 at. %) of nitrogen atom in SiO2 buffer layer for the growth of HfO2 thin film were incorporated by remote plasma treatment. At the microstructural level, the incorporation of nitrogen into the interfacial oxide is shown to occur through the change of the coordination in the interfacial region between HfO2 and Si substrate. Comparing two films with and without nitridation by using angle resolved X-ray photoelectron spectroscopy (ARXPS) and high-resolution transmission electron microscopy (HRTEM), we found that the interfacial layer containing nitrogen effectively suppresses the growth of interface layer and enhances the thermal stability and the immunity to oxygen diffusion during RTA. It was confirmed that the HfO2 film with nitridation remained an amorphous structure after thermal annealing at 600°C for 30s. HfO2/SiOxNy/Si gate stacks showed lower equivalent oxide thickness (EOT) of ~ 1.8nm and lower leakage current density (2.6 X 10-8 A/cm2 at 1MV/cm), compared to HfO2 gate dielectric of the same physical thickness, which could result in the formation of silicon-nitrogen bonds at the interfacial layer. |
| 저자 |
최지훈, 김석훈, 강현석, 우상현, 홍형석, 전형탁
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| 소속 |
한양대 |
| 키워드 |
ALD; HfO2; nitrogen
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| E-Mail |
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