| 초록 |
Transparent conducting oxides have been intensively investigated for optoelectronic applications such as light emitting diodes, touch panels, flat panel displays, and solar cells. Low resistivity, high mobility, and good transparency are the prime requirements for these devices. In this work, we have prepared the tungsten-doped In2O3 thin films on glass substrate by sol-gel process and spin coating technique. It has been found that the tungsten-doped In2O3 films have an amorphous structure and show a very smooth and featureless surface. The electrical resistivity for the tungsten-doped In2O3 film can be lowered to be 3.2 X 10-2 Ωcm. In addition, the optical transmittances of the films are higher than about 85% in visible wavelength region. |
